Laser-induced resonant carrier lifetimes in n-InSb
- 15 September 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (6) , 1655-1657
- https://doi.org/10.1063/1.334153
Abstract
Transient carrier lifetimes of high‐purity n‐InSb are found to exhibit a two‐stage decay in the photoconductive response. Resonant increases in the first stage decay occur at the same magnetic field strengths as resonant interband two‐photon magnetoabsorption between Landau levels. The presence of shallow Te donors is shown to control both the observed resonant and transient behavior.This publication has 9 references indexed in Scilit:
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