Discrepancies in the Number of Stacking Faults Revealed by Various Methods in Epitaxial Silicon
- 1 July 1967
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (8) , 3417-3418
- https://doi.org/10.1063/1.1710137
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Observations of silicon at high temperature by transmission electron microscopyPhilosophical Magazine, 1966
- Stacking Fault Nucleation in Epitaxial Silicon on Variously Oriented Silicon SubstratesJournal of Applied Physics, 1964
- Nondestructive Method for Revealing Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1964
- X-Ray Observations of Lattice Defects in Particular, Stacking Faults in the Neighbourhood of a Twin Boundary in Silicon Single CrystalsJournal of the Physics Society Japan, 1962
- Application à la métallographie des méthodes interférentielles à deux ondes polariséesRevue de Métallurgie, 1955