Silicon Schottky Diode Power Converters Beyond 100 GHz
- 1 June 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 15292517,p. 547-550
- https://doi.org/10.1109/rfic.2007.380943
Abstract
This paper presents circuits based on Schottky barrier diodes (SBDs) in IBM's 0.13-μm SiGe BiCMOS process. Circuits such as sub-harmonic up-conversion mixers and frequency doublers are demonstrated at frequencies beyond 100 GHz on silicon. These circuits enable power generation at millimeter wave frequencies on silicon. The frequency doublers can deliver >0 dBm output power at 110 GHz and the 2X sub-harmonic up converters exhibit peak conversion loss of <3dB up to 120 GHz.Keywords
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