Self-Consistent Pseudopotential Calculations on Si(111) Unreconstructed and (2×1) Reconstructed Surfaces
- 2 June 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 34 (22) , 1385-1388
- https://doi.org/10.1103/physrevlett.34.1385
Abstract
A recently developed method for the self-consistent calculation of localized configurations has been applied to the Si(111) surface. Results have been obtained for unrelaxed, relaxed, and (2×1) reconstructed (buckled) surfaces. Densities of states and charge densities are presented and discussed. The salient experimental findings are reproduced.Keywords
This publication has 12 references indexed in Scilit:
- Self-consistent charge density and surface electronic states for the (001) face of lithiumPhysical Review B, 1974
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Surface Potential, Charge Density, and Ionization Potential for Si(111)-a Self-Consistent CalculationPhysical Review Letters, 1974
- Surface States and Surface Bonds of Si(111)Physical Review Letters, 1973
- Observation of a Band of Silicon Surface States Containing One Electron Per Surface AtomPhysical Review Letters, 1972
- Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAsPhysical Review Letters, 1972
- Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of SiliconPhysical Review B, 1968
- Computer calculations of semiconductor surface structuresSurface Science, 1968
- The model potential for positive ionsPhilosophical Magazine, 1965