Novel trap state at the grain boundary: Metastable character of defects in p-HgMnTe and p-HgCdMnTe bicrystals
- 1 February 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (3) , 1203-1207
- https://doi.org/10.1063/1.343036
Abstract
The existence of the novel trap state in bicrystals of narrow-gap semiconductors is clearly demonstrated. It is shown that this state exhibits metastable character and its origin is related to the grain boundary. A method of tuning the concentration and mobility of electrons by means of the high-pressure freezeout of carriers on these metastable states has been applied to study two-dimensional properties of the grain boundaries in HgMnTe and HgCdMnTe semimagnetic semiconductors.This publication has 14 references indexed in Scilit:
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