A novel three-step process for low-defect-density silicon on sapphire
- 15 July 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (2) , 163-165
- https://doi.org/10.1063/1.92648
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Improvement of crystalline quality of epitaxial silicon-on-sapphire by ion implantation and furnace regrowthSolid-State Electronics, 1980
- Crystalline disorder reduction and defect-type change in silicon on sapphire films by silicon implantation and subsequent thermal annealingApplied Physics Letters, 1980
- Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devicesElectronics Letters, 1979
- Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniquesApplied Physics Letters, 1979
- Cross-sectional electron microscopy of silicon on sapphireApplied Physics Letters, 1975