Chapter 2 Impurity Germanium and Silicon Infrared Detectors
- 1 January 1977
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 100 references indexed in Scilit:
- Photoionization cross sections of holes at zinc centers in siliconJournal of Applied Physics, 1973
- Recombination Cross Section for Holes at a Singly Ionized Copper Impurity in GermaniumPhysical Review B, 1972
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Photoconductivity Associated with Indium Acceptors in SiliconPhysical Review B, 1968
- Effect of Compensation on Breakdown Fields in Homogeneous SemiconductorsPhysical Review B, 1967
- Experimental Determination of the Energy Distribution Functions and Analysis of the Energy-Loss Mechanisms of Hot Carriers in-Type GermaniumPhysical Review B, 1964
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Photoconductive detector of radiation of wavelength greater than 50Journal of Scientific Instruments, 1959
- Properties of Gold-Doped SiliconPhysical Review B, 1957
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953