An irreversible resistance transition in polycrystalline silicon thin film resistors
- 1 January 1990
- Vol. 40 (1) , 213-216
- https://doi.org/10.1016/0042-207x(90)90159-v
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Resistance Switching Characteristics in Polycrystalline Silicon Film ResistorsJournal of the Electrochemical Society, 1985
- A model of electrical conduction in polycrystalline siliconIEEE Transactions on Electron Devices, 1984
- Growth and Physical Properties of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1984
- Programming mechanism of polysilicon resistor fusesIEEE Transactions on Electron Devices, 1982
- Modeling and optimization of monolithic polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1981
- A fault-tolerant 256K RAM fabricated with molybdenum-polysilicon technologyIEEE Journal of Solid-State Circuits, 1980
- A novel MOS PROM using a highly resistive poly-Si resistorIEEE Transactions on Electron Devices, 1980