A fault-tolerant 256K RAM fabricated with molybdenum-polysilicon technology

Abstract

Describes a 256K molybdenum-polysilicon (Mo-poly) gate dynamic MOS RAM using a single transistor cell. Circuit technologies, including a capacitive-coupled sense-refresh amplifier and a redundant circuitry, enable the achievement of high performance in combination with Mo-poly technology. Electron-beam direct writing and dry etching technologies are fully utilized to make 1 /spl mu/m accurate patterns. The 256K word/spl times/1 bit device is fabricated on a 5.83 mm/spl times/5.90 mm chip. Cell size is 8.05 /spl mu/m/spl times/8.60 /spl mu/m. The additional 4K spare cells and the associated circuits, in which newly developed electrically programmable elements are used, occupy less than 10 percent of the whole chip area. The measured access time is 160 ns under V/SUB DD/=5 V condition.

Keywords

This publication has 12 references indexed in Scilit:

A 1-/spl mu/m Mo-Poly 64-Kbit MOS RAM
IEEE Journal of Solid-State Circuits, 1980
A novel MOS PROM using a highly resistive poly-Si resistor
IEEE Transactions on Electron Devices, 1980
A single 5V 64K dynamic RAM
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1980
A 5V-only 64K dynamic RAM
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1980
Chloromethylated Polystyrene as a Dry Etching‐Resistant Negative Resist for Submicron Technology
Journal of the Electrochemical Society, 1979
FET RAMs
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1979
A fault-tolerant 64K dynamic RAM
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1979
(Invited) Mo-gate MOS Metallization System
Japanese Journal of Applied Physics, 1979
A high speed molybdenum gate MOS RAM
IEEE Journal of Solid-State Circuits, 1978
Single transistor MOS RAM using a short-channel MOS transistor
IEEE Journal of Solid-State Circuits, 1978