Existence of a phonon bottleneck for excitons in quantum dots
- 29 November 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 64 (24) , 241305
- https://doi.org/10.1103/physrevb.64.241305
Abstract
A phonon bottleneck is manifested for correlated electron/hole (exciton) states in self-organized quantum dots (QD’s) with a flat, truncated shape. Suppressed relaxation and hot luminescence from excited states in the low-density regime are demonstrated. The long low-temperature relaxation time of being times the radiative lifetime, is attributed to a quenched polar exciton-LO-phonon coupling in truncated QD’s based on eight-band model calculations.
Keywords
This publication has 24 references indexed in Scilit:
- Resonant Raman scattering in self-organized InAs/GaAs quantum dotsApplied Physics Letters, 2000
- Polaron lifetime and energy relaxation in semiconductor quantum dotsPhysical Review B, 2000
- Enhanced Polar Exciton-LO-Phonon Interaction in Quantum DotsPhysical Review Letters, 1999
- Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theoryPhysical Review B, 1999
- Electronic structures of [110]-faceted self-assembled pyramidal InAs/GaAs quantum dotsPhysical Review B, 1999
- Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dotsJournal of Crystal Growth, 1998
- Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dotsPhysical Review B, 1996
- Intrinsic mechanism for the poor luminescence properties of quantum-box systemsPhysical Review B, 1991
- Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gasesPhysical Review B, 1990
- Theory of the linear and nonlinear optical properties of semiconductor microcrystallitesPhysical Review B, 1987