Ordered Overlayers of C 60 on GaAs(110) Studied with Scanning Tunneling Microscopy
- 26 April 1991
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 252 (5005) , 547-548
- https://doi.org/10.1126/science.252.5005.547
Abstract
Studies of C60 overlayer growth on GaAs(110) with scanning tunneling microscopy show large first monolayer islands that are locally well ordered, structurally stable, and commensurate with the GaAs surface owing to molecule-substrate interactions. Within the distorted close-packed structure, two distinct adsorption sites were identified, one of them being elevated because of stress in the C60 monolayer.Keywords
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