Atom-selective imaging of the GaAs(110) surface
- 23 March 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (12) , 1192-1195
- https://doi.org/10.1103/physrevlett.58.1192
Abstract
We report the first voltage-dependent scanning tunneling microscope images of a compound semiconductor surface, GaAs(110). Images show either only Ga atoms, or only As atoms, depending on the bias voltage. By combining voltage-dependent images with theoretical calculations, we quantitatively determine surface structural parameters which cannot be inferred from the images alone.Keywords
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