Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)
- 26 April 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 36 (17) , 1058-1061
- https://doi.org/10.1103/physrevlett.36.1058
Abstract
Extension of analyses of low-energy-electron-diffraction intensities to encompass structure determination of low-index semiconductor surfaces reveals that GaAs(110) is reconstructed. The As atoms protrude from the surface whereas the Ga atoms are displaced inward such that no nearest-neighbor bond lengths are altered.Keywords
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