Void-free silicon-wafer-bond strengthening in the 200–400 °C range
- 1 March 1993
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 36 (2) , 149-156
- https://doi.org/10.1016/0924-4247(93)85009-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Hydrophilicity of Silicon Wafers for Direct BondingPhysica Status Solidi (a), 1991
- SOI by Silicon Wafer Direct Bonding - Problems of Wafer Warpage and Surface ChemistrySolid State Phenomena, 1991
- Silicon Wafer Bonding Mechanism for Silicon-on-Insulator StructuresJapanese Journal of Applied Physics, 1990
- Low‐Temperature Preparation of Silicon/Silicon Interfaces by the Silicon‐to‐Silicon Direct Bonding MethodJournal of the Electrochemical Society, 1990
- Silicon‐on‐Insulator Films Obtained by Etchback of Bonded WafersJournal of the Electrochemical Society, 1989
- A Model for the Silicon Wafer Bonding ProcessJapanese Journal of Applied Physics, 1989
- High-Quality SOI by Bonding of Standard SI Wafers and Thinning by Polishing Techniques OnlyJapanese Journal of Applied Physics, 1989
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988
- Silicon and silicon dioxide thermal bonding for silicon-on-insulator applicationsJournal of Applied Physics, 1988
- A dielectrically isolated photodiode array by silicon-wafer direct bondingIEEE Electron Device Letters, 1987