A dielectrically isolated photodiode array by silicon-wafer direct bonding
- 1 October 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (10) , 454-456
- https://doi.org/10.1109/edl.1987.26692
Abstract
A dielectrically isolated silicon photodiode array was successfully fabricated by a silicon-wafer direct-bonding method. A thermally oxidized wafer and another bare silicon wafer were placed in close contact at room temperature and bonded by heat treatment at 1100°C applied for 4 h. A series-connected 23-photodiode array, with a 1.6 × 1.6-mm chip size, produced a 13-V open-circuit voltage and a 7.7-µA short-circuit current at a 10-mA GaAlAs infrared-light-emitting diode current. Enough voltage was obtained to drive power MOSFET's for switching applications, photocoupled solid-state relays, and other uses.Keywords
This publication has 10 references indexed in Scilit:
- Characteristics of SOI CMOS circuits made in n/n + /n oxidised porous silicon structuresElectronics Letters, 1986
- Submicrometer CMOS devices in zone-melting-recrystallized SOI filmsIEEE Electron Device Letters, 1986
- High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealingApplied Physics Letters, 1986
- Improved dielectrically isolated device integration by silicon-wafer direct bonding(SDB) techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Silicon-on-insulator (SOI) by bonding and ETCH-backPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- A new dielectric isolation method using porous siliconSolid-State Electronics, 1981
- cw laser anneal of polycrystalline silicon: Crystalline structure, electrical propertiesApplied Physics Letters, 1978
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Dielectrically isolated saturating circuitsIEEE Transactions on Electron Devices, 1968
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955