A new dielectric isolation method using porous silicon
- 28 February 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (2) , 159-164
- https://doi.org/10.1016/0038-1101(81)90012-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Application of IPOS technique to MOS ICsJapanese Journal of Applied Physics, 1979
- Hydrogen ion implantation profiles as determined by SIMSNuclear Instruments and Methods, 1978
- Distribution of irradiation damage in silicon bombarded with hydrogenPhysical Review B, 1977
- On the origin of leakage currents in silicon-on-sapphire MOS transistorsIEEE Transactions on Electron Devices, 1977
- Dielectric Isolation: Comprehensive, Current and FutureJournal of the Electrochemical Society, 1977
- Formation and Properties of Porous Silicon and Its ApplicationJournal of the Electrochemical Society, 1975
- Determination of the semiconductor doping profile right up to its surface using the MIS capacitorSolid-State Electronics, 1975
- Shallow donor formation in Si produced by proton bombardmentPhysica Status Solidi (a), 1973
- Electrically and optically active defects in silicon-on-sapphire filmsJournal of Crystal Growth, 1968
- Single-Crystal Silicon on a Sapphire SubstrateJournal of Applied Physics, 1964