Determination of the semiconductor doping profile right up to its surface using the MIS capacitor
- 28 February 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (2) , 189-198
- https://doi.org/10.1016/0038-1101(75)90102-1
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Correcting interface-state errors in MOS doping profile determinationsJournal of Applied Physics, 1973
- Using the MIS capacitor for doping profile measurements with minimal interface state errorIEEE Transactions on Electron Devices, 1973
- Interface states in SiSiO2 interfacesSolid-State Electronics, 1972
- A Limitation of the Pulsed Capacitance Technique of Measuring Impurity ProfilesJournal of the Electrochemical Society, 1972
- The influence of debye length on the C-V measurement of doping profilesIEEE Transactions on Electron Devices, 1971
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971
- On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]IBM Journal of Research and Development, 1969
- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962