Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Anisotropic electron transport has been observed in InxGa1-xAs/GaAs heterostructures grown by MOVPE on (001) and intentionally misoriented GaAs substrates. The low field electron mobilities in two perpendicular directions are found to be higher in the [110] direction than in the [110] direction. The ratio of µ[110]/µ[110] derived from Hall measurements is related to the degree of substrate misorientation as well as epilayer composition. Finally, the photoluminescence spectra are polarized along orthogonal directions. These anisotropic properties are directly related to the anisotropy of [110] and [110] dislocations due to lattice mismatch between the substrates and the layers.Keywords
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