Anisotropic transport in modulation-doped quantum-well structures
- 15 March 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (6) , 2301-2306
- https://doi.org/10.1063/1.337940
Abstract
Anisotropic electron transport has been observed in GaAs modulation‐doped quantum wells grown by molecular‐beam epitaxy on a thick (001) Al0.3Ga0.7As buffer grown at 620 °C. The low‐field electron mobility at 77 K in the [110] direction is a factor of 2 larger than the mobility in the [1̄10] direction for a 90‐Å quantum well. Thicker quantum wells (150, 200, and 300 Å) show progressively less anisotropy, which vanishes for a 300‐Å quantum well. The degree of anisotropy is also reduced or eliminated by suspending growth of the Al0.3Ga0.7As for a period of 300 s prior to growing the GaAs quantum well. Growing the Al0.3Ga0.7As buffer at higher temperatures (680 °C) also reduces the degree of anisotropy. Higher two‐dimensional electron gas sheet densities result in less anisotropy. The anisotropy is eliminated by replacing the thick Al0.3Ga0.7As buffer with a periodic multilayer structure comprising 15 Å of GaAs and 200 Å of Al0.3Ga0.7As. The degree of anisotropy is related to the thickness and growth parameters of the Al0.3Ga0.7As layer grown just prior to the growth of the GaAs quantum well.This publication has 27 references indexed in Scilit:
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