Effect of substrate annealing and V: III flux ratio on the molecular beam epitaxial growth of AlGaAs-GaAs single quantum wells
- 1 November 1983
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 12 (6) , 1051-1063
- https://doi.org/10.1007/bf02654974
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Use of a superlattice to enhance the interface properties between two bulk heterolayersApplied Physics Letters, 1983
- Heat treatment of semi-insulating chromium-doped gallium arsenide substrates with converted surface removed prior to molecular beam expitaxial growthApplied Physics Letters, 1983
- Extrinsic layer at AlxGa1−xAs-GaAs interfacesApplied Physics Letters, 1982
- Extrinsic photoluminescence from GaAs quantum wellsPhysical Review B, 1982
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- Luminescence properties of GaAs-Ga1−x Alx As double heterostructures and multiquantum-well superlattices grown by molecular beam epitaxyApplied Physics Letters, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- Chromium and tellurium redistribution in GaAs and Al0.3Ga0.7As grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Thermal conversion of GaAsJournal of Applied Physics, 1980
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980