Luminescence properties of GaAs-Ga1−x Alx As double heterostructures and multiquantum-well superlattices grown by molecular beam epitaxy
- 15 June 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (12) , 965-968
- https://doi.org/10.1063/1.92237
Abstract
Undoped double-heterostructures (DH) and multiquantum-well structures (MQW) grown by molecular beam epitaxy are studied by cathodoluminescence and photoluminescence. Their structural properties are established by scanning transmission electron microscopy. In DH discrete nonradiative centers are observed with densities ∼104–105 cm−2; some of them are correlated with dislocations originating in the substrate. In sharp contrast, MQW show a very uniform luminescence with no nonradiative action at dislocations. These results might explain in part the higher quantum efficiency of MQW grown by molecular beam epitaxy.Keywords
This publication has 6 references indexed in Scilit:
- An improved technique for selective etching of GaAs and Ga1−xAlxAsJournal of Applied Physics, 1980
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980
- Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAsJournal of Applied Physics, 1980
- Electron-hole plasma in direct-gap semiconductors with low polar coupling: GaAs, InP, and GaSbPhysical Review B, 1978
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1972