Analysis of quantum efficiency of high brightness GaInN/GaN quantum wells

This publication has 7 references indexed in Scilit:

• Optical Properties of Nitride Quantum Wells: How to Separate Fluctuations and Polarization Field Effects
  Physica Status Solidi (b), 1999
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
  Japanese Journal of Applied Physics, 1998
• The role of piezoelectric fields in GaN-based quantum wells
  MRS Internet Journal of Nitride Semiconductor Research, 1998
• Recombination dynamics of localized excitons in ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$N-${\mathrm{In}}_{0.05}$${\mathrm{Ga}}_{0.95}$N multiple quantum wells
  Physical Review B, 1997
• Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
  Applied Physics Letters, 1996
• Recombination of correlated electron-hole pairs in two-dimensional semiconductors
  Physical Review B, 1993
• Influence of barrier height on carrier lifetime in ${\mathrm{Ga}}_{1\mathrm{-}\mathit{y}}$${\mathrm{In}}_{\mathit{y}}$P/(${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$${)}_{1\mathrm{-}\mathit{y}}$${\mathrm{In}}_{\mathit{y}}$P single quantum wells
  Physical Review B, 1992