A 213 GHz AlInAs/GaInAs/InP HEMT MMIC oscillator
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 924-926
- https://doi.org/10.1109/iedm.1993.347470
Abstract
We have fabricated submillimeter-wave MMIC oscillator circuits using AlInAs/GaInAs HEMTs on InP substrates, which have resulted in oscillators operating at fundamental frequencies of 155 and 213 GHz. These results are believed to be the highest frequency three-terminal oscillators reported to date.Keywords
This publication has 2 references indexed in Scilit:
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performanceJournal of Vacuum Science & Technology B, 1988