Intersubband emission from semiconductor superlattices excited by sequential resonant tunneling
- 3 July 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (1) , 74-77
- https://doi.org/10.1103/physrevlett.63.74
Abstract
We present the first observation of infrared light emission from a semiconductor superlattice in a resonant-tunneling experiment. Radiation from the three lowest intersubband transitions is observed, proving resonant tunneling an effective means of populating high-lying states of the superlattice. The relative strength of the emission lines enables us to estimate the electron temperature below the optical-phonon energy to reach about 140 K, whereas transitions originating above the optical-phonon energy are strongly quenched.Keywords
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