Chemical vapor deposition and photoluminescence properties of Zn-DOPED GaAs
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 783-785
- https://doi.org/10.1051/rphysap:019780013012078300
Abstract
An experimental study of the VPE growth of GaAs at 1 023 K from the AsH 3-HCl-Ga-H 2 system yields for the dependence of the hole concentration on the technological parameters : p (300 K) ∼ p HCl·p-1GaCl·p1/2AsH3·p Zn. It is concluded that the process takes place under non equilibrium conditions. The PL intensity depends distinctly on the preparation conditions but does not fit a simple modelKeywords
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