Kinetics of transport and epitaxial growth of GaAs with a Ga-AsCl3 system
- 1 January 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 8 (1) , 117-128
- https://doi.org/10.1016/0022-0248(71)90032-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Epitaxial GaAs Kinetic Studies: {001} OrientationJournal of the Electrochemical Society, 1970
- A Thin GaAs N on N+ Epitaxial Film with Abrupt Interface in Carrier Concentration ProfileJapanese Journal of Applied Physics, 1970
- Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial ProcessJapanese Journal of Applied Physics, 1968
- Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate InterfaceJapanese Journal of Applied Physics, 1968
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- Preparation of GaAs[sub x]P[sub 1−x] by Vapor Phase ReactionJournal of the Electrochemical Society, 1964
- Analysis of the Hydrogen Reduction of Silicon Tetrachloride Process on the Basis of a Quasi-Equilibrium ModelJournal of the Electrochemical Society, 1964
- Solubility of III–V Compound Semiconductors in Column III LiquidsJournal of the Electrochemical Society, 1963
- The vapour pressures of certain liquidsTransactions of the Faraday Society, 1950