Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopy
- 9 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (11) , 1347-1349
- https://doi.org/10.1063/1.105304
Abstract
Scanning tunneling microscopy (STM) has been made on an as‐prepared Si(111) surface by the 1%‐HF treatment. The STM images for both the empty and filled states exhibit regular dots with the threefold symmetry on the flat parts of the surface: the distance between dots measures 2.2 Å. The origin of these dots can be ascribed to the H atoms of the trihydride (SiH3) phase on the Si(111) surface. The electrons can tunnel from or to the tail states of the σ (filled) states or the σ* (empty) states around the H atoms for the SiH3 radicals, respectively.Keywords
This publication has 19 references indexed in Scilit:
- The importance of structure and bonding in semiconductor surface chemistry: hydrogen on the Si(111)-7 × 7 surfaceSurface Science, 1991
- Two reaction channels directly observed for atomic hydrogen on the Si(111)-7×7 surfacePhysical Review B, 1991
- Structure of the H-saturated Si(100) surfacePhysical Review Letters, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Atomic hydrogen chemisorption on the Si(111) 7×7 surfaceJournal of Vacuum Science & Technology A, 1990
- Real-time observation of oxygen and hydrogen adsorption on silicon surfaces by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphologyApplied Physics Letters, 1988
- Atom-resolved surface chemistry using scanning tunneling microscopyPhysical Review Letters, 1988
- Imaging chemical-bond formation with the scanning tunneling microscope:dissociation on Si(001)Physical Review Letters, 1987