Growth of GaAs/AlGaAs quantum well structures using a large-scale MOCVD reactor
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 553-557
- https://doi.org/10.1016/0022-0248(86)90351-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Extremely uniform growth of GaAs and GaAlAs by low pressure metalorganic chemical vapor deposition on three-inch GaAs substratesJournal of Crystal Growth, 1984
- Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAsJournal of Crystal Growth, 1984
- Abrupt OMVPE grown GaAs/GaAlAs heterojunctionsJournal of Crystal Growth, 1984
- Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1984
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981