Status of 1200V 4H-SiC Power DMOSFETs
- 1 December 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The commercial production of 1200 V 4H-SiC power MOSFETs is quickly becoming feasible in light of advances made in 4H-SiC substrate quality, improvements made in epitaxy, investigations of optimum device deign, advances made in increasing channel mobility with nitridation annealing, and optimization of device fabrication processes. These devices promise to enhance the efficiency of power handling circuits that currently rely on Si-based IGBTs. We routinely fabricate 1200 V power DMOSFETs with specific on-resistance (R on(sp) ) of 10 mOmega-cm2 that show sub-microamps of leakage current at 1200 V with breakdown at greater than 1500 V. 1200V 4H-SiC DMOSFETs with active areas of 0.10 cm 2 or 0.168 cm 2 have been demonstrated for nominal current ratings of 10 A and 20 A, respectively.Keywords
This publication has 2 references indexed in Scilit:
- Recent Advances in (0001) 4H-SiC MOS Device TechnologyMaterials Science Forum, 2004
- Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbideApplied Physics Letters, 2000