Recent Advances in (0001) 4H-SiC MOS Device Technology

This publication has 10 references indexed in Scilit:

• N2O Processing Improves the 4H-SiC:SiO2 Interface
  Materials Science Forum, 2002
• Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
  Materials Science Forum, 2000
• Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
  Applied Physics Letters, 2000
• Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
  Applied Physics Letters, 2000
• Intrinsic SiC/SiO2 Interface States
  Physica Status Solidi (a), 1997
• Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
  Applied Physics Letters, 1997
• Improved oxidation procedures for reduced SiO2/SiC defects
  Journal of Electronic Materials, 1996
• Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface
  Journal of Electronic Materials, 1995
• ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2 INTERFACES
  Applied Physics Letters, 1970
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967