Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
- 14 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (15) , 2028-2030
- https://doi.org/10.1063/1.118773
Abstract
Interfacial characteristics of Al/SiO 2 /n -type 6H–SiC metal–oxide–semiconductor capacitors fabricated by rapid thermal processing (RTP) with N 2 O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O 2 leads to an excellent SiO 2 /n -type 6H–SiC interface with interface state density in the order of 10 10 –10 11 eV −1 cm −2 . NO annealing improves the SiO 2 /n -type 6H–SiC interface, while N 2 O annealing increases the interface state density.Keywords
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