Technique for monitoring slow interface trapcharacteristics in MOS capacitors
- 12 October 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (21) , 1880-1881
- https://doi.org/10.1049/el:19951258
Abstract
A new experimental technique presented in the Letter simultaneously extracts the trap response time as well as trap density and energy in the silicon bandgap. The technique is illustrated by measuring the trap density increase in a MOS capacitor due to constant current stressing and is compared with the results obtained using the conventional quasistatic C/V technique.Keywords
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