Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 29 (3) , 239-252
- https://doi.org/10.1109/4.278345
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
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