Enhanced electron trapping near channel edges in NMOS transistors
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (7) , 1680-1686
- https://doi.org/10.1109/16.141234
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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