Lateral distribution of radiation-induced damage in MOSFETs
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6) , 1124-1129
- https://doi.org/10.1109/23.124084
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Lateral distribution of hot-carrier-induced interface traps in MOSFETsIEEE Transactions on Electron Devices, 1988
- A reliable approach to charge-pumping measurements in MOS transistorsIEEE Transactions on Electron Devices, 1984
- Modeling total dose effects in narrow-channel devicesIEEE Transactions on Electron Devices, 1983
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969