Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2194-2209
- https://doi.org/10.1109/16.8794
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
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