Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

This publication has 29 references indexed in Scilit:

• Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
  IEEE Transactions on Electron Devices, 1988
• The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's
  IEEE Transactions on Electron Devices, 1987
• Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region
  IEEE Transactions on Electron Devices, 1987
• Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation
  IEEE Transactions on Electron Devices, 1987
• The effect of channel hot electron stress on a.c. device characteristics of MOSFETs
  Solid-State Electronics, 1986
• Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique
  IEEE Electron Device Letters, 1986
• Analysis and modeling of floating-gate EEPROM cells
  IEEE Transactions on Electron Devices, 1986
• Hot carrier effects in MOS transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984
• Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's
  IEEE Electron Device Letters, 1983
• MINIMOS—A two-dimensional MOS transistor analyzer
  IEEE Transactions on Electron Devices, 1980