Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region
- 1 February 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (2) , 378-385
- https://doi.org/10.1109/t-ed.1987.22933
Abstract
The effect of localized damage (interface states and/or trapped charges) on the ohmic region characteristics of electrically stressed MOSFET's is analyzed using the two-dimensional (2-D) solution of Poisson's equation. The device aging induced by hot-electron injection is summarized in the formation of a narrow defective interface region whose nature, extension, and position in the channel are the parameters of our investigation. Fundamental differences are observed between the effect of interface states and that of fixed oxide charges. In addition, the channel conductance G is shown to be greatly influenced by the extension and position of the zone of defects. The correlation between the degradation of the maximum transconductance and that of the threshold voltage is modeled and demonstrated to be an important tool in the diagnosis of device degradation. The interaction between the damaged and undamaged channel regions is found to produce a transconductance overshoot that attenuates the aging effects. A negative transconductance degradation (i.e., transconductance increase) in the case of positively charged defects and an apparent amelioration of the mobility degradation factor θ in the case of localized acceptor states are two direct consequences of this effect. The errors arising from the modeling of aged devices with 1-D homogeneous analytical models are outlined.Keywords
This publication has 11 references indexed in Scilit:
- Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET'sIEEE Transactions on Electron Devices, 1990
- Etude et modélisation de la dégradation des transistors MOS submicroniques soumis à une contrainte électriqueRevue de Physique Appliquée, 1986
- Hot-electron-induced degradation in MOSFET's at 77 KIEEE Transactions on Electron Devices, 1985
- Hot-electron and hole-emission effects in short n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- Analysis and Simulation of Semiconductor DevicesPublished by Springer Nature ,1984
- Determination of spatial surface state density distribution in MOS and SIMOS transistors after channel hot electron injectionElectronics Letters, 1982
- Nonplanar VLSI device analysis using the solution of Poisson's equationIEEE Transactions on Electron Devices, 1980
- Theory of the MOS transistor in weak inversion-new method to determine the number of surface statesIEEE Transactions on Electron Devices, 1975