Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

This publication has 23 references indexed in Scilit:

• A new procedure for lifetime prediction of n-channel MOS-transistors using the charge pumping technique
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
  IEEE Transactions on Electron Devices, 1989
• THE HOT-ELECTRON PROBLEM IN SUBMICRON MOSFET
  Le Journal de Physique Colloques, 1988
• Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
  IEEE Transactions on Electron Devices, 1988
• Hot-electron-induced interface state generation in n-channel MOSFET's at 77 K
  IEEE Transactions on Electron Devices, 1987
• Hot-carrier-induced degradation in p-channel LDD MOSFET's
  IEEE Electron Device Letters, 1986
• IIIB-1 degradation of 77-K MOSFET characteristics due to channel hot electrons
  IEEE Transactions on Electron Devices, 1984
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984
• Hot-electron currents in very short channel MOSFET's
  IEEE Electron Device Letters, 1983
• TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
  Applied Physics Letters, 1966