Hot-electron and hole-emission effects in short n-channel MOSFET's
- 1 March 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (3) , 691-699
- https://doi.org/10.1109/t-ed.1985.22000
Abstract
This paper presents a comparison of hot-carrier degradation experiments with simulations of hot electron and hole emission into the oxide. It is shown that both the emission of holes and of electrons are essential to explain the dominant generation of negative charge by a new degradation mechanism. Moreover, a peak of positive-charge generation at a gate voltage close to threshold was found in our experiments which is due to hole trapping. A simple degradation model based on the calculated electron and hole emission is presented which gives a very good description of the observed behavior of degradation effects.Keywords
This publication has 34 references indexed in Scilit:
- High field current induced-positive charge transients in SiO2Journal of Applied Physics, 1983
- Slow and fast states induced by hot electrons at Si-SiO2 interfaceJournal of Applied Physics, 1982
- Two-carrier nature of interface-state generation in hole trapping and radiation damageApplied Physics Letters, 1981
- Hot-electron injection into the oxide in n-channel MOS devicesIEEE Transactions on Electron Devices, 1981
- Interface State and Charge Generation by Electron Tunneling into Thin Layers of SiO2Published by Springer Nature ,1981
- A study of oxide traps and interface states of the silicon-silicon dioxide interfaceJournal of Applied Physics, 1980
- THE PROPERTIES OF ELECTRON AND HOLE TRAPS IN THERMAL SILICON DIOXIDE LAYERS GROWN ON SILICONPublished by Elsevier ,1978
- Avalanche Injection of Holes into SiO2IEEE Transactions on Nuclear Science, 1977
- Capture cross section and trap concentration of holes in silicon dioxideJournal of Applied Physics, 1976
- Photoinjection into SiO2: Electron Scattering in the Image Force Potential WellJournal of Applied Physics, 1971