Interface State and Charge Generation by Electron Tunneling into Thin Layers of SiO2
- 1 January 1981
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Negative bias stress of MOS devices at high electric fields and degradation of MNOS devicesJournal of Applied Physics, 1977
- Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressingJournal of Applied Physics, 1977
- Impact ionization and positive charge in thin SiO2 filmsJournal of Applied Physics, 1976