Electron trapping in SiO2 at 295 and 77 °K
- 1 October 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (10) , 6366-6372
- https://doi.org/10.1063/1.325727
Abstract
The electron trapping behavior of SiO2 has been measured as a function of thickness at 295 and 77 °K. The devices used were metal‐oxide‐semiconductor devices with the SiO2 grown thermally. The results indicate bulk traps are dominant at 295 °K and traps associated with the Si‐SiO2 interface are dominant at 77 °K. The effect of processing conditions was also studied and the optimum conditions are different for the two temperatures used for the measurements. These observations have been verified using a photo I‐V technique. The generation of donor states in the SiO2 near the Si‐SiO2 interface was observed as a result of the electron current through the SiO2.This publication has 10 references indexed in Scilit:
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