Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K
- 1 June 1976
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (6) , 2740-2743
- https://doi.org/10.1063/1.322998
Abstract
Sodium ions in the SiO2 layer of MOS structures have been completely neutralized at liquid‐nitrogen temperatures (77 °K) by avalanche injection of electrons from the Si substrate. Three principal electron capture cross sections (2×10−15, 2×10−19, and 5×10−20 cm2) associated with ionic sodium (Na+) contamination have been observed.This publication has 15 references indexed in Scilit:
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