AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2
- 15 September 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (6) , 174-177
- https://doi.org/10.1063/1.1652955
Abstract
Injection of carriers into thermally grown SiO2 from an avalanche plasma in silicon is a new way of achieving high current densities in SiO2. Electron injection from p‐type silicon and hole injection from n‐type silicon by hot carrier emission have been observed. Average electron current densities as high as 10−2 A/cm2 have been observed to flow through 1000 Å of SiO2. The oxide becomes negatively charged as a result of electron injection and positively charged as a result of hole injection. These charging effects appear to be related to the presence of water in the oxide.Keywords
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