Capture cross section and trap concentration of holes in silicon dioxide
- 1 March 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (3) , 1079-1081
- https://doi.org/10.1063/1.322729
Abstract
Hole trapping in thermally grown silicon‐dioxide films has been studied using optically induced hot‐hole injection in p‐channel polysilicon‐SiO2‐silicon field‐effect‐transistor structures. Analysis of the data assuming a uniform trap distribution and no detrapping gives 3.1×10−13 cm2 and 1.4×1018 cm−3 for the capture cross section and the trap concentration, respectively. Initial hole‐trapping efficiency is almost 99% for a 1000‐Å SiO2 film.This publication has 13 references indexed in Scilit:
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