Effects of ionizing radiation on oxidized silicon surfaces and planar devices

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Abstract
This paper examines in detail the effects of high and low energy electron, X-ray, and ultraviolet radiation on oxidized silicon surfaces and planar devices. Two permanent effects of ionizing radiation on oxidized silicon surfaces are distinguished: 1) The buildup of a positive space charge within the oxide, and 2) The creation of fast surface states at the oxide-silicon interface resulting in increased surface recombination velocity. The dependence of these effects on dose and dose rate, on bias applied during irradiation, and on structural parameters is discussed and a theory is presented which accounts for the observed features of the space-charge buildup. This theory involves trapping of holes which are generated within the oxide by the radiation. It is shown that all details of the experimental observations can be accounted for by assuming a high density of hole traps near the oxide-silicon interface which decays rapidly with distance into the oxide. Radiation-induced changes in the characteristics of MOS and junction field-effect transistors, p-n junction diodes, and p-n-p and n-p-n transistors are reported and examined in terms of the above two effects. It is shown that the charge buildup causes shifts in the operating point of MOS transistors, catastrophic increases in the reverse current of p-n junctions, and variations in their breakdown voltage. The increase in fast surface-state density is responsible for the lowering of the transconductance of MOS transistors and, in combination with the space-charge buildup, for the degradation of the current gain in bipolar transistors. It is shown that junction field-effect transistors are relatively insensitive to both effects of ionizing radiation and therefore offer the most promise for use in ionizing radiation environments.