Relationship between MOSFET degradation and hot-electron-induced interface-state generation
- 1 February 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (2) , 50-52
- https://doi.org/10.1109/edl.1984.25829
Abstract
Device degradation due to hot-electron injection in n-channel MOSFET's is mainly caused by mobility degradation and reduced mobile charges in the channel introduced by interface-state generation. With the use of simple gradual-channel approximation (GCA), a linear relationship is derived between the threshold shift, relative transconductance reduction, and the number of interface states generated. This model provides a link between the electrical characteristics of a degraded device and its physical damages and, therefore, is a vital tool in the study of hot-electron-induced device degradation mechanisms.Keywords
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