Tunneling and thermal emission of electrons from a distribution of deep traps in SiO/sub 2/ (nMOSFET)
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (6) , 1100-1103
- https://doi.org/10.1109/16.214735
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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