A new test structure for direct measurement of hot-carrier stress effects on CMOS circuit performance
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (8) , 1958-1959
- https://doi.org/10.1109/16.119039
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Simulation of MOSFET lifetime under AC hot-electron stressIEEE Transactions on Electron Devices, 1988
- Modeling of hot electron effects on the device parameters for circuit simulationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985