The role of electron trap creation in enhanced hot-carrier degradation during AC stress (n-channel MOSFET)
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (6) , 267-269
- https://doi.org/10.1109/55.55276
Abstract
Enhanced AC degradation during gate voltage transients is shown to be related to neutral electron traps created at low gate voltages under conditions of hole injection and filled at high gate voltages under conditions of electron injection. During DC stress, where interface state damage dominates, electron trap damage is not seen because the created traps are neutral. In experiments where inductive ringing is eliminated, AC degradation rates are independent of the type of edge (falling versus rising) and independent of the rise/fall time.Keywords
This publication has 14 references indexed in Scilit:
- Transient hot-electron effect on n-channel device degradation (MOSFETs)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Analysis of mechanisms for the enhanced degradation during AC hot carrier stress of MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Transient substrate current effects on n-channel MOSFET device lifetimePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETsIEEE Transactions on Electron Devices, 1990
- The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- MOSFET degradation due to hot-carrier effect at high frequenciesIEEE Electron Device Letters, 1990
- The effect of transients on hot carriersIEEE Electron Device Letters, 1989
- Dynamic stress experiments for understanding hot-carrier degradation phenomenaIEEE Transactions on Electron Devices, 1988
- Lifetimes and substrate currents in static and dynamic hot-carrier degradationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Degradation of n-MOS-Transistors after pulsed stressIEEE Electron Device Letters, 1984